dlts
**DLTS (Deep Level Transient Spectroscopy)** is a semiconductor characterization technique that identifies and quantifies electrically active defects and impurities by analyzing capacitance transients as a function of temperature.
## What Is DLTS?
- **Principle**: Monitors junction capacitance recovery after pulsed bias
- **Output**: Defect energy levels, concentrations, capture cross-sections
- **Range**: Detects traps from 10¹⁰ to 10¹⁶ cm⁻³
- **Temperature**: Scan from cryogenic to 400K+
## Why DLTS Matters
DLTS uniquely identifies specific defect types by their electrical signatures, critical for contamination monitoring and process development.
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**DLTS Defect Signatures**:
| Defect | Energy (eV from Ec) | Origin |
|--------|---------------------|--------|
| Fe-B pair | Ec - 0.10 | Iron contamination |
| Au | Ec - 0.54 | Gold contamination |
| Ni | Ec - 0.36 | Nickel contamination |
| Divacancy | Ec - 0.42 | Implant damage |