failure analysis

**Yes, we provide comprehensive failure analysis services** to **identify root causes of chip failures and defects** — with in-house FA lab equipped with electrical FA tools (curve tracer, IDDQ tester, timing analyzer, functional tester, parametric tester), physical FA tools (optical microscope, SEM scanning electron microscope, TEM transmission electron microscope, FIB focused ion beam, EDX energy dispersive X-ray, SIMS secondary ion mass spectrometry, X-ray, acoustic microscopy), and experienced FA engineers with 15+ years expertise analyzing 1,000+ failure cases annually across all failure modes and technologies. FA services include electrical failure analysis (parametric failures, functional failures, timing failures, power failures, leakage), physical failure analysis (delayering, cross-sectioning, TEM analysis, composition analysis, defect characterization), package failure analysis (wire bond failures, die attach issues, package cracks, moisture, delamination), and reliability failure analysis (HTOL failures, TC failures, ESD failures, latch-up, electromigration, TDDB). FA process includes failure verification and characterization (reproduce failure, characterize symptoms, electrical measurements), non-destructive analysis (X-ray for package inspection, acoustic microscopy for delamination, IDDQ for leakage), electrical fault isolation (voltage contrast SEM, OBIRCH optical beam induced resistance change, photon emission microscopy), physical deprocessing and inspection (delayering, SEM inspection, TEM cross-section, EDX composition analysis), root cause determination and reporting (identify failure mechanism, determine root cause, assess impact), and corrective action recommendations (design changes, process changes, handling improvements, preventive measures). FA turnaround includes quick look (1 week, preliminary findings, non-destructive analysis, initial assessment), standard FA (2-4 weeks, complete analysis, electrical and physical FA, detailed report), and complex FA (4-8 weeks, multiple techniques, TEM analysis, detailed investigation, multiple samples) with costs ranging from $5K (simple electrical FA, curve tracing, IDDQ) to $50K (complex physical FA with TEM, FIB, multiple samples, extensive analysis). FA deliverables include detailed FA report with findings (failure mode, failure mechanism, root cause, contributing factors), high-resolution images and data (SEM images, TEM images, EDX spectra, electrical data), root cause analysis and failure mechanism (physical explanation, electrical model, failure progression), corrective action recommendations (design changes, process improvements, handling procedures), and presentation to customer team (review findings, discuss recommendations, answer questions). Common failure modes we analyze include EOS/ESD damage (electrical overstress, electrostatic discharge, gate oxide breakdown, junction damage), electromigration (metal migration, void formation, open circuits, resistance increase), time-dependent dielectric breakdown TDDB (oxide breakdown, gate oxide failure, inter-layer dielectric failure), hot carrier injection HCI (carrier trapping, threshold voltage shift, transconductance degradation), contamination (particles, mobile ions, organic residues, moisture), process defects (lithography defects, etch defects, deposition defects, CMP defects), design issues (timing violations, latch-up, insufficient ESD protection, design rule violations), and package-related failures (wire bond failures, die attach voids, package cracks, moisture ingress, popcorning). Our FA expertise helps customers improve yield (identify and fix systematic defects, 5-10% yield improvement typical), improve reliability (understand failure mechanisms, implement corrective actions, reduce field failures), support warranty claims (determine if manufacturing defect or customer misuse, provide evidence), and continuous improvement (feedback to design and manufacturing, prevent recurrence, lessons learned). FA lab capabilities include electrical characterization (DC parameters, AC timing, functional test, IDDQ, voltage/temperature stress), optical inspection (optical microscope up to 1000×, DIC differential interference contrast, polarized light), SEM analysis (resolution to 1nm, voltage contrast, EDX composition analysis, cross-section), TEM analysis (resolution to 0.1nm, crystal structure, defect characterization, composition), FIB circuit edit (cross-section, deprocessing, circuit modification, sample preparation), and chemical analysis (EDX, SIMS, FTIR, XPS for composition and contamination). Contact [email protected] or +1 (408) 555-0320 to request failure analysis services with sample submission, failure description, and analysis requirements — we provide fast turnaround, detailed analysis, and actionable recommendations to solve your failure issues.