rf power

RF power is the radio frequency electrical power applied to generate and sustain plasma in etch and deposition tools. **Frequencies**: Common frequencies are 13.56 MHz, 2 MHz, 27 MHz, 60 MHz. Different frequencies for different purposes. **Plasma generation**: RF power ionizes gas, creating plasma with ions, electrons, and reactive species. **Coupling**: Capacitively coupled plasma (CCP) or inductively coupled plasma (ICP) designs. **Source power**: Power to generate plasma. Higher power = denser plasma. **Bias power**: Separate RF applied to wafer to control ion bombardment energy. See separate entry. **Etch rate relationship**: Higher RF power typically increases etch rate (more reactive species). **Power delivery**: RF generator, matching network, electrode. Impedance matching critical. **Process control**: RF power is key knob for etch rate, selectivity, profile control. **Pulsed RF**: Advanced processes use pulsed RF for better profile control. ON/OFF cycling. **Harmonics**: Higher harmonics can affect plasma properties. Managed in system design.