Two-Dimensional Dopant Profiling is a metrology technique that maps dopant concentration across both depth and lateral dimensions in semiconductor structures.

What Is 2D Dopant Profiling?

• Methods: SCM (Scanning Capacitance), SSRM (Spreading Resistance), SIMS tomography
• Resolution: 1-10nm lateral, depending on technique
• Applications: Junction shape analysis, LDD profile verification, implant scatter
• Contrast: 1D profiling (SIMS) only measures depth

Why 2D Profiling Matters

Modern transistors have complex 3D junction geometries. 1D depth profiles miss critical lateral dopant distribution that affects device performance.

<svg viewBox="0 0 393 226" xmlns="http://www.w3.org/2000/svg" style="max-width:100%;height:auto" role="img"><rect x="0" y="0" width="393" height="226" rx="12" fill="#0d1117"/><g font-family="ui-monospace,SFMono-Regular,Menlo,Consolas,&quot;Liberation Mono&quot;,monospace" font-size="14"><text xml:space="preserve" x="20" y="31.7"><tspan fill="#c9d1d9">2D vs 1D Dopant Profiling:</tspan></text><text xml:space="preserve" x="20" y="50.7"><tspan fill="#c9d1d9">          </tspan><tspan fill="#6e7681">┌─</tspan><tspan fill="#c9d1d9"> Gate </tspan><tspan fill="#6e7681">─┐</tspan></text><text xml:space="preserve" x="20" y="69.7"><tspan fill="#c9d1d9">1D SIMS:  </tspan><tspan fill="#6e7681">↓</tspan><tspan fill="#c9d1d9">  only vertical</tspan></text><text xml:space="preserve" x="20" y="88.7"><tspan fill="#c9d1d9">     </tspan><tspan fill="#6e7681">┌────┴────┐</tspan></text><text xml:space="preserve" x="20" y="107.7"><tspan fill="#c9d1d9">     </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9">  Source </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9">    2D Profile reveals:</tspan></text><text xml:space="preserve" x="20" y="126.7"><tspan fill="#c9d1d9">     </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9">         </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9">    - Lateral diffusion</tspan></text><text xml:space="preserve" x="20" y="145.7"><tspan fill="#c9d1d9">     </tspan><tspan fill="#6e7681">│↓↓↓↓↓↓↓↓│</tspan><tspan fill="#c9d1d9">    - Junction curvature  </tspan></text><text xml:space="preserve" x="20" y="164.7"><tspan fill="#c9d1d9">     </tspan><tspan fill="#6e7681">└─────────┘</tspan><tspan fill="#c9d1d9">    - Pocket implant shape</tspan></text><text xml:space="preserve" x="20" y="183.7"><tspan fill="#c9d1d9">     </tspan></text><text xml:space="preserve" x="20" y="202.7"><tspan fill="#c9d1d9">2D SCM: Maps full x-y-z concentration</tspan></text></g></svg>

Technique Comparison: