Channeling RBS is the combination of Rutherford Backscattering Spectrometry with ion channeling — aligning the analysis beam along a crystal axis to measure crystal quality, damage depth profiles, and impurity lattice site locations with high sensitivity.

What Does Channeling RBS Measure?

• Minimum Yield ($chi_{min}$): Crystal perfection. Perfect Si: $chi_{min}$ ~ 2-3%.
• Damage Profile: Dechanneling rate vs. depth reveals the depth distribution of crystal damage.
• Substitutional Fraction: If impurity signal decreases in channeled spectrum, impurity is on substitutional sites.
• Amorphous Layer: Amorphous layers show $chi = 1$ (random yield) in the channeled spectrum.

Why It Matters

• Implant Characterization: Gold standard for characterizing ion implant damage and amorphization.
• Epitaxy Quality: Measures epitaxial layer crystallinity and interface quality.
• Site Location: Determines whether dopants are electrically active (substitutional) or inactive (interstitial/clustered).

Channeling RBS is crystal quality measurement via ion steering — using the channeling effect to probe lattice perfection and dopant incorporation.