Die Singulation is separating individual dies from processed wafer using cutting (mechanical, laser, plasma) — final post-CMOS step. Mechanical Dicing diamond blade (~100-200 μm thick) rotating ~3000 rpm. Kerf Loss blade width removed; narrow kerf maximizes density. Blade Wear diamond dulls; ~10,000 wafer lifespan. Chipping cutting forces can crack die edges. Water Cooling cools blade; assists chip removal. Alignment cuts follow scribe lines; precision ~5 μm. Laser Dicing UV or IR ablates silicon. Non-contact, no blade wear. UV Dicing 248 nm excimer; clean edges. IR Dicing 1064 nm thermal ablation; cheaper; potential cracks. Plasma Dicing RIE etch along scribe. Clean edge, minimal chipping. Slower than mechanical. Edge Quality impacts reliability. Cracks at edges are failure sites. Design avoid circuits near scribe (~50 μm margin). Chipping Prevention laser produces fewest; mechanical with parameters; plasma natural low rate. Warped Wafers thin wafers: laser/plasma preferred (mechanical risky). Tape and Reel post-dicing, dies on adhesive tape. Automated pick-and-place. Yield dicing yield: fraction of wafers → usable dies. Spacing, defects affect. Singulation efficiency critical to cost in wafer manufacturing.