Home Knowledge Base Energy Dispersive X-ray Spectroscopy (EDS/EDX)

Energy Dispersive X-ray Spectroscopy (EDS/EDX) is an analytical technique that identifies the elemental composition of materials by detecting characteristic X-rays emitted when a specimen is bombarded with an electron beam — integrated into SEMs and TEMs as the most accessible and widely used chemical analysis tool in semiconductor failure analysis and process development.

What Is EDS?

Why EDS Matters

EDS Capabilities

EDS Specifications

ParameterModern Silicon Drift Detector (SDD)
Energy resolution125-130 eV at Mn Kα
Detection elementsBe (Z=4) to U (Z=92)
Detection limit0.1-1 at%
Spatial resolution0.5-2 µm (SEM), 0.1-1 nm (STEM)
Analysis speed1-60 seconds per spectrum
Mapping speedMinutes to hours per map

EDS vs. Other Analytical Techniques

TechniqueStrengths over EDSWhen to Use Instead
WDS (Wavelength Dispersive)Better resolution, lower detection limitOverlapping peaks, trace analysis
EELSBetter light element, bonding infoTEM thin foil analysis
XPSSurface-sensitive, chemical stateSurface chemistry, oxidation state
SIMSppb detection limitTrace contamination, dopant profiling

EDS is the first-line chemical analysis tool in semiconductor failure analysis — providing rapid, non-destructive elemental identification that guides every investigation from contamination source identification to interface characterization and process verification.

energy dispersive x-ray spectroscopy (eds/edx)energy dispersive x-ray spectroscopyeds/edxmetrology

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