Forksheet is an advanced transistor architecture that extends the nanosheet concept by placing NMOS and PMOS nanosheets side-by-side separated by a thin dielectric wall — enabling tighter N-to-P spacing than conventional GAA and further standard cell area reduction.

Forksheet vs. GAA Nanosheet

• GAA: NMOS and PMOS are separate nanosheet stacks with standard isolation spacing.
• Forksheet: N and P stacks share a common gate with a dielectric wall between them.
• Dielectric Wall: A thin (5-10 nm) dielectric wall isolates N and P channels while allowing ~30% tighter spacing.
• Gate Structure: Gate wraps around nanosheets on 3 sides (like a fork) — one side faces the dielectric wall.

Why It Matters

• Area Reduction: ~20% smaller standard cell area than GAA nanosheet.
• N-P Spacing: Reduces N-to-P spacing from ~45 nm (GAA) to ~20 nm.
• Roadmap: Positioned between GAA nanosheet and CFET in the device architecture roadmap (imec).

Forksheet is the intimate CMOS pair — placing NMOS and PMOS nanosheets side-by-side with minimal spacing for maximum density.