MEBES Format is a proprietary mask data format developed by ETEC (now part of Applied Materials) for electron-beam lithography systems used in photomask manufacturing.
What Is MEBES?
- Full Name: Manufacturing Electron Beam Exposure System
- Purpose: Define patterns for e-beam direct-write on photomasks
- Structure: Hierarchical format with trapezoids as primitives
- Usage: Industry standard for mask shops since 1980s
Why MEBES Format Matters
MEBES remains the dominant format for fracturing GDSII designs into e-beam writable primitives, though newer formats like OASIS are emerging.
<svg viewBox="0 0 611 245" xmlns="http://www.w3.org/2000/svg" style="max-width:100%;height:auto" role="img"><rect x="0" y="0" width="611" height="245" rx="12" fill="#0d1117"/><g font-family="ui-monospace,SFMono-Regular,Menlo,Consolas,"Liberation Mono",monospace" font-size="14"><text xml:space="preserve" x="20" y="31.7"><tspan fill="#c9d1d9">MEBES Data Flow:</tspan></text><text xml:space="preserve" x="20" y="50.7"><tspan fill="#c9d1d9">GDSII Design </tspan><tspan fill="#6e7681">→</tspan><tspan fill="#c9d1d9"> Fracture Software </tspan><tspan fill="#6e7681">→</tspan><tspan fill="#c9d1d9"> MEBES File </tspan><tspan fill="#6e7681">→</tspan><tspan fill="#c9d1d9"> E-beam Writer </tspan><tspan fill="#6e7681">→</tspan><tspan fill="#c9d1d9"> Mask</tspan></text><text xml:space="preserve" x="20" y="69.7"></text><text xml:space="preserve" x="20" y="88.7"><tspan fill="#c9d1d9">MEBES Primitives:</tspan></text><text xml:space="preserve" x="20" y="107.7"><tspan fill="#6e7681">┌─────────────────┐</tspan></text><text xml:space="preserve" x="20" y="126.7"><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> Trapezoid </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">←</tspan><tspan fill="#c9d1d9"> Basic shape unit</tspan></text><text xml:space="preserve" x="20" y="145.7"><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> / \ </tspan><tspan fill="#6e7681">│</tspan></text><text xml:space="preserve" x="20" y="164.7"><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> / \ </tspan><tspan fill="#6e7681">│</tspan></text><text xml:space="preserve" x="20" y="183.7"><tspan fill="#6e7681">└─────────────────┘</tspan></text><text xml:space="preserve" x="20" y="202.7"></text><text xml:space="preserve" x="20" y="221.7"><tspan fill="#c9d1d9">Each pattern decomposes into variable-size trapezoids</tspan></text></g></svg>
Format Characteristics:
- Binary format with chip header and pattern data
- Supports 1nm address resolution
- Stripes for parallel writing optimization
- Context-aware fracturing for write-speed optimization
mebes formatmask datae-beam lithography
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