More than Moore is the semiconductor technology strategy that adds value through functional diversification rather than dimensional scaling — integrating analog, RF, power management, sensors, MEMS, and other non-digital functions alongside digital logic in advanced packages, recognizing that many critical semiconductor functions (analog, power, sensing) do not benefit from transistor shrinking and are better served by mature, optimized process nodes combined through heterogeneous integration.

What Is More than Moore?

• Definition: A technology development path that increases semiconductor value by integrating diverse functionalities (analog, RF, power, sensors, actuators, passives) rather than by scaling transistor dimensions — combining chips fabricated on different, application-optimized process nodes into a single package.
• Complementary to More Moore: More than Moore is not a replacement for scaling but a complement — the digital logic core continues to scale (More Moore) while analog, RF, power, and sensor functions are optimized on mature nodes and integrated through advanced packaging.
• Node Optimization: A 5G RF front-end works best on 45nm RF-SOI, a power management IC works best on 180nm BCD, and a MEMS sensor works best on a specialized MEMS process — More than Moore combines these optimized chips rather than forcing everything onto a single leading-edge node.
• System-in-Package (SiP): The primary implementation vehicle for More than Moore — multiple dies from different process technologies assembled in a single package that functions as a complete system.

Why More than Moore Matters

• Analog Doesn't Scale: Analog circuit performance (noise, linearity, dynamic range) does not improve with transistor shrinking — in fact, lower supply voltages at advanced nodes degrade analog performance, making mature nodes preferable for analog functions.
• Cost Optimization: Manufacturing a power management IC on 3nm costs 10-50× more than on 180nm with no performance benefit — More than Moore avoids this waste by using the right node for each function.
• IoT and Edge: IoT devices require sensors, RF, power management, and modest digital processing — More than Moore integration provides complete IoT solutions in small packages at low cost.
• Automotive: Modern vehicles contain 1,000-3,000 semiconductor chips spanning digital, analog, power, RF, and sensor functions — More than Moore integration reduces component count, board area, and system cost.

More than Moore Technologies

• RF/Analog: RF front-ends, data converters (ADC/DAC), PLLs, and amplifiers optimized on 22-65nm RF-SOI or SiGe BiCMOS processes — integrated with digital baseband via advanced packaging.
• Power Management: Voltage regulators, DC-DC converters, and battery management ICs on 90-180nm BCD (Bipolar-CMOS-DMOS) processes — high-voltage capability impossible on advanced digital nodes.
• MEMS Sensors: Accelerometers, gyroscopes, pressure sensors, and microphones on specialized MEMS processes — integrated with CMOS readout circuits through wafer bonding or SiP.
• Photonics: Silicon photonic transceivers on 45-90nm SOI processes — integrated with digital CMOS through 2.5D or 3D packaging for data center optical interconnects.
• Passives: High-quality inductors, capacitors, and filters integrated into the package substrate or on dedicated passive dies — enabling complete RF systems in a single package.

More than Moore is the diversification strategy that complements transistor scaling — adding value through functional integration of analog, RF, power, sensor, and photonic capabilities on optimized process nodes, combined through advanced packaging to create complete semiconductor systems that deliver capabilities impossible to achieve on any single process technology.