Multi-Beam Mask Writer is a next-generation mask writing technology that uses a massively parallel array of individually controllable electron beamlets — 250,000+ beamlets simultaneously write the mask pattern, achieving both high resolution and high throughput by parallelizing the writing process.

Multi-Beam Technology

• Beamlet Array: 256K+ individual beamlets arranged in an array — each beamlet is independently blanked (on/off).
• Rasterization: The mask is written in a raster scan pattern — all beamlets write simultaneously across a stripe.
• Resolution: Same resolution as single-beam e-beam — sub-10nm features on mask.
• IMS (Ion/Electron Multibeam Systems): MBMW-101 and MBMW-201 from IMS Nanofabrication (now part of KLA).

Why It Matters

• Write Time: 10× faster than VSB for shot-count-heavy advanced masks — enables ILT and curvilinear OPC.
• Curvilinear Masks: Multi-beam can write curvilinear (non-Manhattan) mask patterns without shot count penalty.
• Cost-Effective: For EUV masks and advanced DUV masks, multi-beam reduces write time from 20+ hours to <10 hours.

Multi-Beam Mask Writer is 250,000 electron beams writing at once — the massively parallel future of mask writing for advanced semiconductor nodes.