Real-Time Process Control is the continuous adjustment of process parameters during wafer processing based on real-time sensor feedback — using in-situ measurements and closed-loop algorithms to maintain optimal process conditions throughout each run.

How Does Real-Time Control Work?

• Sensors: In-situ measurements (temperature, pressure, optical emission, reflectometry, mass spec).
• Algorithm: PID controller, model predictive control (MPC), or advanced control calculates corrections.
• Actuation: Adjusts process parameters (power, gas flow, temperature) in real time.
• Examples: Etch endpoint detection (stop when film clears), ALD temperature compensation.

Why It Matters

• Within-Wafer Control: Adjusts parameters during the process to compensate for real-time variations.
• Endpoint Detection: Precisely stops etch or CMP at the correct thickness.
• Fastest Correction: No delay — corrections are applied during the same wafer process.

Real-Time Process Control is steering the process while it runs — using live sensor feedback to maintain optimal conditions without waiting for post-process measurements.