Wet Anisotropic Etching uses orientation-dependent etch rates in crystalline materials to create precisely shaped structures, commonly using KOH or TMAH on silicon.
What Is Wet Anisotropic Etching?
- Mechanism: Different crystal planes etch at different rates
- Etchants: KOH (potassium hydroxide), TMAH (tetramethylammonium hydroxide)
- Rate Ratio: {100}:{111} can exceed 100:1
- Applications: MEMS cavities, V-grooves, sharp tips, through-wafer vias
Why Anisotropic Wet Etching Matters
Etching self-terminates on slow-etching {111} planes, creating atomically smooth surfaces and precisely defined angles without expensive plasma equipment.
<svg viewBox="0 0 460 245" xmlns="http://www.w3.org/2000/svg" style="max-width:100%;height:auto" role="img"><rect x="0" y="0" width="460" height="245" rx="12" fill="#0d1117"/><g font-family="ui-monospace,SFMono-Regular,Menlo,Consolas,"Liberation Mono",monospace" font-size="14"><text xml:space="preserve" x="20" y="31.7"><tspan fill="#c9d1d9">Anisotropic Etch in (100) Silicon:</tspan></text><text xml:space="preserve" x="20" y="50.7"><tspan fill="#c9d1d9">Starting: After KOH etch:</tspan></text><text xml:space="preserve" x="20" y="69.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">────────────</tspan><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">────────────</tspan></text><text xml:space="preserve" x="20" y="88.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> Mask </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> ╲ ╱</tspan></text><text xml:space="preserve" x="20" y="107.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">├──────────┤</tspan><tspan fill="#c9d1d9"> ╲ ╱</tspan></text><text xml:space="preserve" x="20" y="126.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">→</tspan><tspan fill="#c9d1d9"> ╲╱</tspan></text><text xml:space="preserve" x="20" y="145.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> Silicon </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> ╲ ╱ </tspan><tspan fill="#6e7681">←</tspan><tspan fill="#c9d1d9"> 54.7° angle</tspan></text><text xml:space="preserve" x="20" y="164.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">│</tspan><tspan fill="#c9d1d9"> ╲ ╱ ({111} planes)</tspan></text><text xml:space="preserve" x="20" y="183.7"><tspan fill="#c9d1d9"> </tspan><tspan fill="#6e7681">└──────────┘</tspan><tspan fill="#c9d1d9"> ╲╱</tspan></text><text xml:space="preserve" x="20" y="202.7"><tspan fill="#c9d1d9"> </tspan></text><text xml:space="preserve" x="20" y="221.7"><tspan fill="#c9d1d9">Self-limiting V-groove (111 planes resist etching)</tspan></text></g></svg>
Etchant Comparison:
| Property | KOH | TMAH |
|---|---|---|
| {100}/{111} ratio | ~400 | ~35 |
| CMOS compatible | No (K+ contaminant) | Yes |
| Cost | Low | Higher |
| Surface roughness | Better | Good |
wet anisotropic etchkoh etchingtmah etch
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