Chip Foundry Services supports a comprehensive range of process nodes from 180nm mature processes to 7nm leading-edge FinFET — including specialty processes for analog, RF, power, MEMS, and image sensors with access to TSMC, Samsung, GlobalFoundries, and UMC foundries.

Available Process Nodes

Mature Nodes (180nm-90nm) - High Volume, Low Cost:

180nm Process:

• Technology: 6-metal CMOS, 1.8V/3.3V/5V I/O
• Applications: MCU, power management, analog/mixed-signal, automotive
• Wafer Cost: $1,000-$1,500 per 200mm wafer
• Mask Cost: $50K-$80K
• Die per Wafer: 2,000-8,000 depending on size
• Strengths: Lowest cost, highest yield (>95%), proven reliability
• Foundries: TSMC, UMC, SMIC, TowerJazz

130nm Process:

• Technology: 6-8 metal CMOS, 1.2V/1.8V/3.3V I/O, embedded Flash option
• Applications: MCU, IoT, consumer, automotive, industrial
• Wafer Cost: $1,500-$2,000 per 200mm wafer
• Mask Cost: $80K-$120K
• Die per Wafer: 3,000-12,000 depending on size
• Strengths: Good cost/performance, mature, automotive-qualified
• Foundries: TSMC, UMC, GlobalFoundries, SMIC

90nm Process:

• Technology: 7-9 metal CMOS, 1.0V/1.8V/3.3V I/O, low-k dielectric
• Applications: Application processors, connectivity, consumer SoCs
• Wafer Cost: $2,000-$2,500 per 200mm wafer
• Mask Cost: $150K-$250K
• Die per Wafer: 4,000-15,000 depending on size
• Strengths: Good performance, moderate cost, high integration
• Foundries: TSMC, UMC, GlobalFoundries, Samsung

Advanced Nodes (65nm-28nm) - Balanced Performance/Cost:

65nm Process:

• Technology: 8-10 metal CMOS, 1.0V/1.8V/2.5V I/O, low-k, copper
• Applications: Consumer SoCs, connectivity, automotive, industrial
• Wafer Cost: $2,500-$3,500 per 300mm wafer
• Mask Cost: $300K-$500K
• Die per Wafer: 5,000-20,000 depending on size
• Strengths: Sweet spot for cost/performance, widely available
• Foundries: TSMC, UMC, GlobalFoundries, Samsung, SMIC

40nm Process:

• Technology: 9-11 metal CMOS, 1.1V core, low-k, high-k metal gate option
• Applications: Mid-range SoCs, FPGA, networking, storage controllers
• Wafer Cost: $3,000-$4,000 per 300mm wafer
• Mask Cost: $500K-$1M
• Die per Wafer: 6,000-25,000 depending on size
• Strengths: Good performance/watt, mature process
• Foundries: TSMC, UMC, GlobalFoundries, Samsung

28nm Process:

• Technology: 10-12 metal CMOS, 0.9V/1.0V core, high-k metal gate, multiple variants
• Variants: 28nm HP (high performance), 28nm LP (low power), 28nm HPC+ (high performance computing)
• Applications: High-end SoCs, AI accelerators, automotive, networking
• Wafer Cost: $4,000-$5,000 per 300mm wafer
• Mask Cost: $1M-$2M
• Die per Wafer: 8,000-30,000 depending on size
• Strengths: Excellent performance/watt, long-lived node, automotive-qualified
• Foundries: TSMC, GlobalFoundries, Samsung, UMC

Leading-Edge Nodes (22nm-7nm) - Highest Performance:

22nm Process:

• Technology: FinFET (tri-gate), 11-13 metal layers, high-k metal gate
• Applications: High-performance computing, data center, AI
• Wafer Cost: $5,000-$7,000 per 300mm wafer
• Mask Cost: $2M-$4M
• Strengths: FinFET advantages (better electrostatics, lower leakage)
• Foundries: Intel (limited availability), GlobalFoundries (discontinued)

16nm/14nm Process:

• Technology: FinFET, 12-15 metal layers, EUV option for critical layers
• Applications: Smartphones, high-performance computing, AI, networking
• Wafer Cost: $6,000-$9,000 per 300mm wafer
• Mask Cost: $3M-$5M
• Die per Wafer: 10,000-40,000 depending on size
• Strengths: High performance, good power efficiency, proven for volume
• Foundries: TSMC (16nm), Samsung (14nm), GlobalFoundries (14nm, discontinued)

10nm Process:

• Technology: 2nd-gen FinFET, 13-16 metal layers, EUV for some layers
• Applications: Smartphones, AI accelerators, high-performance computing
• Wafer Cost: $9,000-$12,000 per 300mm wafer
• Mask Cost: $5M-$8M
• Strengths: 2× density vs 16nm, improved performance/watt
• Foundries: TSMC (N10, N7), Samsung (10nm), Intel (10nm)

7nm Process:

• Technology: Advanced FinFET, 14-18 metal layers, EUV lithography
• Applications: Flagship smartphones, data center CPUs/GPUs, AI accelerators
• Wafer Cost: $10,000-$17,000 per 300mm wafer
• Mask Cost: $5M-$10M
• Die per Wafer: 15,000-50,000 depending on size
• Strengths: Highest performance, best power efficiency, EUV simplifies manufacturing
• Foundries: TSMC (N7, N7+, N6), Samsung (7nm LPP)

Specialty Process Technologies

BCD (Bipolar-CMOS-DMOS):

• Nodes: 180nm, 130nm, 90nm, 65nm
• Voltage: 20V to 700V high-voltage devices
• Applications: Power management ICs, motor drivers, LED drivers, automotive
• Features: Bipolar for precision analog, CMOS for logic, DMOS for power
• Foundries: TSMC, GlobalFoundries, TowerJazz, X-FAB

RF/Analog:

• Nodes: 180nm, 130nm, 90nm, 65nm, 40nm
• Features: High-resistivity substrates, MIM capacitors, precision resistors, varactors
• Applications: RF transceivers, wireless connectivity, radar, 5G
• Performance: fT/fmax up to 300GHz (65nm RF)
• Foundries: TSMC, GlobalFoundries, TowerJazz

CMOS Image Sensors (CIS):

• Nodes: 180nm, 130nm, 90nm, 65nm, 45nm
• Features: Backside illumination (BSI), stacked architecture, deep trench isolation
• Applications: Smartphone cameras, automotive cameras, security, medical imaging
• Performance: 1.0μm to 2.8μm pixel pitch
• Foundries: TSMC, Samsung, TowerJazz, Sony

MEMS (Micro-Electro-Mechanical Systems):

• Nodes: 180nm, 130nm with MEMS modules
• Features: Deep RIE, wafer bonding, TSV, hermetic sealing
• Applications: Accelerometers, gyroscopes, pressure sensors, microphones, inkjet
• Foundries: TSMC, GlobalFoundries, TowerJazz, X-FAB, Bosch

SOI (Silicon-On-Insulator):

• Nodes: 180nm, 130nm, 90nm, 65nm, 45nm, 28nm
• Features: Reduced parasitic capacitance, radiation hardness, high-temperature operation
• Applications: RF switches, automotive, aerospace, defense
• Types: FD-SOI (fully-depleted), PD-SOI (partially-depleted)
• Foundries: GlobalFoundries, Tower Jazz, Soitec

Process Selection Guidance

Choose 180nm-130nm For:

• Cost-sensitive applications (<$1 per chip target)
• Analog/mixed-signal heavy designs
• Automotive and industrial (proven reliability)
• Low-to-medium performance requirements (<100MHz)
• High-voltage requirements (>5V)

Choose 90nm-65nm For:

• Balanced cost and performance
• Medium complexity SoCs (100K-1M gates)
• IoT and connectivity applications
• Moderate performance (100-500MHz)
• Good integration density

Choose 40nm-28nm For:

• High-performance SoCs (1M-10M gates)
• Application processors, AI edge devices
• Good performance/watt requirements
• Advanced features (high-speed I/O, embedded memory)
• Long product lifetime (28nm is long-lived node)

Choose 16nm-7nm For:

• Highest performance requirements (>2GHz)
• Power-critical applications (mobile, battery-powered)
• Maximum integration (10M+ gates)
• Cutting-edge products (flagship smartphones, data center)
• Willing to pay premium for best technology

Process Node Comparison

Contact for Process Selection:

• Email: [email protected]
• Phone: +1 (408) 555-0100
• Service: Free consultation to recommend optimal process node for your application

Chip Foundry Services provides access to the full spectrum of process technologies from mature to leading-edge — our experts will help you select the optimal node balancing performance, power, cost, and time-to-market for your specific application.