Semiconductor Manufacturing Process: Plasma Physics Mathematical Modeling

Keywords: plasma physics, semiconductor plasma, plasma fundamentals, debye length, plasma frequency, electron temperature, ion bombardment, plasma sheath, glow discharge

Semiconductor Manufacturing Process: Plasma Physics Mathematical Modeling

1. The Physical Context

Semiconductor manufacturing relies on low-temperature, non-equilibrium plasmas for etching and deposition.

Key Characteristics

• Electron temperature: $T_e \approx 1\text{–}10 \text{ eV}$ (~10,000–100,000 K)
• Ion/neutral temperature: $T_i \approx 0.03 \text{ eV}$ (near room temperature)
• Non-equilibrium condition: $T_e \gg T_i$

This disparity is essential—hot electrons drive chemistry while cool heavy particles preserve delicate nanoscale structures.

Common Reactor Types

• CCP (Capacitively Coupled Plasmas): Used for reactive ion etching (RIE)
• ICP (Inductively Coupled Plasmas): High-density plasma etching
• ECR (Electron Cyclotron Resonance): Microwave-driven high-density sources
• Remote plasma sources: Gentle surface treatment and cleaning

2. Fundamental Governing Equations

2.1 The Boltzmann Equation (Master Kinetic Equation)

The foundation of plasma kinetic theory:

Where:

• $f_s(\mathbf{r}, \mathbf{v}, t)$ — Distribution function for species $s$ in 6D phase space
• $q_s$ — Particle charge
• $m_s$ — Particle mass
• $\mathbf{E}$, $\mathbf{B}$ — Electric and magnetic fields
• Right-hand side — Collision operator encoding all scattering physics

2.2 Fluid Approximation (Moment Equations)

Taking velocity moments of the Boltzmann equation yields the fluid hierarchy:

Continuity Equation (Zeroth Moment)

Where:

• $n_s$ — Number density of species $s$
• $\mathbf{u}_s$ — Mean velocity
• $S_s$ — Source/sink terms from chemical reactions

Momentum Equation (First Moment)

Where:

• $p_s = n_s k_B T_s$ — Scalar pressure
• $\boldsymbol{\Pi}_s$ — Viscous stress tensor
• $\mathbf{R}_s$ — Momentum transfer from collisions

Energy Equation (Second Moment)

Where:

• $\mathbf{q}_s$ — Heat flux vector
• $Q_s$ — Energy source terms (heating, cooling, reactions)

2.3 Maxwell's Equations

Full Electromagnetic Set

Electrostatic Approximation (Poisson Equation)

For most processing plasmas:

Where $\mathbf{E} = - abla \phi$.

3. Critical Plasma Parameters

3.1 Debye Length

The characteristic shielding scale:

Numerical form:

Typical values: 10–100 μm in processing plasmas.

3.2 Plasma Frequency

The characteristic electron oscillation frequency:

Numerical form:

3.3 Collision Frequency

Electron-neutral collision frequency:

Where:

• $n_g$ — Neutral gas density
• $\sigma_{en}$ — Collision cross-section
• $\bar{v}_e = \sqrt{8 k_B T_e / \pi m_e}$ — Mean electron speed

3.4 Knudsen Number

Determines the validity of fluid vs kinetic models:

Where:

• $\lambda_{\text{mfp}}$ — Mean free path
• $L$ — Characteristic system length

Regimes:

• $\text{Kn} \ll 1$: Fluid models valid (collisional regime)
• $\text{Kn} \gg 1$: Kinetic treatment required (collisionless regime)
• $\text{Kn} \sim 1$: Transitional regime (most challenging)

4. Sheath Physics: The Critical Interface

The sheath is the thin, non-neutral region where ions accelerate toward surfaces. This controls ion bombardment energy—the key parameter for anisotropic etching.

4.1 Bohm Criterion

Ions must enter the sheath at or above the Bohm velocity:

This arises from requiring monotonically decreasing potential solutions.

4.2 Child-Langmuir Law (Collisionless Sheath)

Space-charge-limited current density:

Where:

• $J$ — Ion current density
• $V_0$ — Sheath voltage
• $s$ — Sheath thickness

4.3 Matrix Sheath Thickness

For high-voltage sheaths:

4.4 RF Sheath Dynamics

In RF plasmas, the sheath oscillates with the applied voltage, creating:

• Self-bias: Time-averaged DC potential due to asymmetric current flow

• Ion Energy Distribution Functions (IEDF): Bimodal structure depending on frequency

• Stochastic heating: Electrons gain energy from oscillating sheath boundary

Frequency Dependence of IEDF

5. Electron Energy Distribution Functions (EEDF)

5.1 Non-Maxwellian Distributions

The EEDF is generally not Maxwellian in low-pressure plasmas. The two-term Boltzmann equation:

Where:

• $A(\varepsilon)$, $B(\varepsilon)$ — Coefficients depending on E-field and cross-sections
• $C_{\text{inel}}$ — Inelastic collision operator

5.2 Common Distribution Types

Maxwellian Distribution

Druyvesteyn Distribution (Elastic-Dominated)

Bi-Maxwellian Distribution

5.3 Rate Coefficient Calculation

Reaction rates depend on the EEDF:

For electron-impact reactions:

6. Plasma Chemistry Modeling

6.1 Species Rate Equations

General form:

Where:

• $k_j$ — Rate coefficient for reaction $j$
• $

u_{jl}$ — Stoichiometric coefficient

• $

u_{\text{loss}}$ — Total loss frequency

6.2 Arrhenius Rate Coefficients

For thermal reactions:

Where:

• $A$ — Pre-exponential factor
• $n$ — Temperature exponent
• $E_a$ — Activation energy

6.3 Example: Chlorine Plasma Chemistry

Simplified Cl₂ plasma reaction set:

Full models include 50+ reactions with rate constants spanning 10+ orders of magnitude.

7. Transport Models

7.1 Drift-Diffusion Approximation

Standard flux expression:

Where:

• $\mu_s$ — Mobility
• $D_s$ — Diffusion coefficient

Einstein Relation:

7.2 Ambipolar Diffusion

In quasi-neutral bulk plasma, electrons and ions diffuse together:

Since $\mu_e \gg \mu_i$:

7.3 Tensor Transport (Magnetized Plasmas)

In magnetic fields, transport becomes anisotropic:

The diffusion tensor has components:

• Parallel: $D_\parallel = D_0$
• Perpendicular: $D_\perp = \frac{D_0}{1 + \omega_c^2 \tau^2}$
• Hall: $D_H = \frac{\omega_c \tau D_0}{1 + \omega_c^2 \tau^2}$

Where $\omega_c = qB/m$ is the cyclotron frequency.

8. Computational Approaches

8.1 Hierarchy of Models

8.2 Fluid Model Implementation

Solve the coupled system:

1. Species continuity equations (one per species) 2. Electron energy equation 3. Poisson equation 4. Momentum equations (often drift-diffusion limit)

Numerical Challenges

• Nonlinear coupling: Exponential dependence of source terms on $T_e$
• Disparate timescales:
• Electron dynamics: ~ns
• Ion dynamics: ~μs
• Chemistry: ~ms
• Spatial scales: Sheath ($\lambda_D \sim 100$ μm) vs reactor (~0.1 m)

Common Numerical Techniques

• Semi-implicit time stepping
• Scharfetter-Gummel discretization for drift-diffusion fluxes
• Multigrid Poisson solvers
• Adaptive mesh refinement near sheaths

8.3 Particle-in-Cell with Monte Carlo Collisions (PIC-MCC)

Algorithm Steps

1. Push particles using equations of motion:

2. Deposit charge onto computational grid 3. Solve Poisson equation for electric field 4. Interpolate field back to particle positions 5. Monte Carlo collisions based on cross-sections

Applications

• Low-pressure kinetic regimes
• IEDF predictions
• Non-local electron kinetics
• Detailed sheath physics

Computational Cost

Scales as $O(N_p \log N_p)$ per timestep, with $N_p \sim 10^6\text{–}10^8$ superparticles.

9. Multi-Scale Coupling: The Grand Challenge

9.1 Scale Hierarchy

9.2 Feature-Scale Modeling

Level-Set Method

Track the evolving surface $\phi = 0$:

Where $V_n$ is the local etch/deposition rate depending on:

• Ion flux $\Gamma_i$ and energy $\varepsilon_i$ from plasma model
• Neutral radical flux $\Gamma_n$
• Surface composition and local geometry
• Angle-dependent yields $Y(\theta, \varepsilon)$

Etch Rate Model

Where:

• $Y_0$ — Base sputter yield
• $f(\varepsilon)$ — Energy-dependent yield function
• $k_s$ — Surface reaction rate
• $\theta_s$ — Surface coverage

9.3 Aspect Ratio Dependent Etching (ARDE)

Physical Mechanisms

• Ion angular distribution effects (Knudsen diffusion in feature)
• Neutral transport limitations
• Differential charging in high-aspect-ratio features
• Sidewall passivation dynamics

10. Electromagnetic Effects in High-Density Sources

10.1 ICP Power Deposition

The RF magnetic field induces an electric field:

Power deposition density:

10.2 Plasma Conductivity

Where:

• $

u_m$ — Electron momentum transfer collision frequency

• $\omega$ — RF angular frequency

10.3 Skin Depth

Electromagnetic field penetration depth:

Typical values: $\delta \approx 1\text{–}3$ cm, creating non-uniform power deposition.

10.4 E-to-H Mode Transition

ICPs exhibit hysteresis behavior:

• E-mode (low power): Capacitive coupling, low plasma density
• H-mode (high power): Inductive coupling, high plasma density

The transition involves bifurcation in the coupled power-density equations.

11. Surface Reaction Modeling

11.1 Surface Reaction Mechanisms

Langmuir-Hinshelwood Mechanism

Both reactants adsorbed:

Eley-Rideal Mechanism

One reactant from gas phase:

Surface Coverage Dynamics

11.2 Kinetic Monte Carlo (KMC)

For atomic-scale surface evolution:

1. Catalog all possible events with rates $\{k_i\}$ 2. Calculate total rate: $k_{\text{tot}} = \sum_i k_i$ 3. Time advance: $\Delta t = -\ln(r_1)/k_{\text{tot}}$ 4. Select event $j$ probabilistically 5. Execute event and update configuration

11.3 Molecular Dynamics for Ion-Surface Interactions

Newton's equations with empirical potentials:

Potentials used:

• Stillinger-Weber (Si)
• Tersoff (C, Si, Ge)
• ReaxFF (reactive systems)

Outputs:

• Sputter yields $Y(\varepsilon, \theta)$
• Damage depth profiles
• Reaction probabilities

12. Emerging Mathematical Methods

12.1 Machine Learning in Plasma Modeling

• Surrogate models: Neural networks for real-time prediction
• Reduced-order models: POD/DMD for parametric studies
• Inverse problems: Inferring plasma parameters from sensor data

12.2 Uncertainty Quantification

Given uncertainties in input parameters:

• Cross-section data (~20–50% uncertainty)
• Surface reaction coefficients
• Boundary conditions

Propagation methods:

• Polynomial chaos expansions
• Monte Carlo sampling
• Sensitivity analysis (Sobol indices)

12.3 Data-Driven Closures

Learning moment closures from kinetic data:

Where $\mathcal{F}_\theta$ is a neural network trained on PIC simulation data.

13. Key Dimensionless Groups

u_m$ | Frequency / collision rate | Collisional vs collisionless |

14. Example: Complete CCP Model

14.1 Governing Equations (1D)

Electron Continuity

Electron Flux

Ion Continuity

Electron Energy Density

Poisson Equation

14.2 Boundary Conditions

At electrodes ($x = 0, L$):

• Potential: $\phi(0,t) = V_{\text{rf}}\sin(\omega t)$, $\phi(L,t) = 0$
• Secondary emission: $\Gamma_e = \gamma \Gamma_i$ (with $\gamma \approx 0.1$)
• Kinetic fluxes: Derived from distribution function at boundary

14.3 Numerical Parameters

Summary

The mathematical modeling of plasmas in semiconductor manufacturing represents a magnificent multi-physics, multi-scale scientific endeavor requiring:

1. Kinetic theory for non-equilibrium particle distributions 2. Fluid mechanics for macroscopic transport 3. Electromagnetism for field and power coupling 4. Chemical kinetics for reactive processes 5. Surface science for etch/deposition mechanisms 6. Numerical analysis for efficient computation 7. Uncertainty quantification for predictive capability

The field continues to advance with machine learning integration, exascale computing enabling full 3D kinetic simulations, and tighter coupling between atomic-scale and reactor-scale models—driven by the relentless progression toward smaller feature sizes and novel materials in semiconductor technology.

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