2d dopant profile

**Two-Dimensional Dopant Profiling** is a metrology technique that maps dopant concentration across both depth and lateral dimensions in semiconductor structures. ## What Is 2D Dopant Profiling? - **Methods**: SCM (Scanning Capacitance), SSRM (Spreading Resistance), SIMS tomography - **Resolution**: 1-10nm lateral, depending on technique - **Applications**: Junction shape analysis, LDD profile verification, implant scatter - **Contrast**: 1D profiling (SIMS) only measures depth ## Why 2D Profiling Matters Modern transistors have complex 3D junction geometries. 1D depth profiles miss critical lateral dopant distribution that affects device performance. ```svg ``` **Technique Comparison**: | Method | Resolution | Quantitative | Sample Prep | |--------|------------|--------------|-------------| | SCM | 5-10nm | Relative | Cross-section | | SSRM | 1-5nm | Yes | Cross-section | | Atom Probe | <1nm | Excellent | Needle specimen |