cfet

**CFET (Complementary FET)** is an advanced transistor architecture that vertically stacks nFET and pFET devices to dramatically reduce logic cell area beyond FinFET and nanosheet limits. ## What Is CFET? - **Structure**: pFET stacked directly above nFET (or vice versa) - **Benefit**: 50%+ area reduction vs. lateral placement - **Timeline**: Expected at 2nm and beyond (2025+) - **Challenge**: Complex process integration, thermal budget management ## Why CFET Matters Horizontal scaling is approaching atomic limits. Vertical stacking provides the next dimension for density improvement. ```svg CFET vs. Traditional Layout:Traditional (lateral): CFET (vertical):┌─────┬─────┐ ┌───────────┐ pFETnFET pFET ├───────────┤└─────┴─────┘ nFET Wide footprint └───────────┘ 50% smallerCFET Cross-Section: ══════════════ Gate p-channel ├──────────────┤ Isolation ├──────────────┤ n-channel ══════════════ Gate (shared or separate) ``` **CFET Integration Challenges**: - Sequential vs. monolithic stacking - Thermal budget for bottom device - Contact routing between stacked devices - Workfunction metal for both polarities

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