contact-over-active-gate integration

**COAG** (Contact-Over-Active-Gate) is an **advanced integration technique that allows metal contacts to be placed directly over the gate electrode in the active transistor region** — eliminating the need for contacts to land only on the gate over isolation (field), dramatically reducing standard cell area. **COAG vs. Traditional** - **Traditional**: Gate contacts must land over STI (isolation) — requires extra space in the cell layout. - **COAG**: Gate contacts can land over the active channel region — enabled by a robust SAC cap. - **Requirement**: The SAC cap must perfectly prevent gate-to-contact shorts even when the contact overlaps the gate. - **Design**: COAG enables single-fin cell designs and significantly smaller standard cells. **Why It Matters** - **Area Reduction**: COAG reduces standard cell height by 1-2 fin pitches — significant area savings. - **Scaling Enabler**: Required for 7nm and below for competitive cell area. - **Design Flexibility**: Gives place-and-route tools more freedom in contact placement. **COAG** is **putting contacts wherever needed** — allowing gate contacts over the active area to shrink standard cell layouts dramatically.