Diffused Base 1954 Slice the Germanium
# Slice the Germanium: A Thickness That Has to Outlast Two Diffusions and Still Leave a Collector
This step cuts wafers from the sections Step 5 approved, and the thickness it chooses has to satisfy a constraint no earlier process in this project's history faced in quite the same form: enough material has to remain beneath the *deeper* of two future junctions to still function as a collector, after both diffusions have each consumed their own share of depth from the same starting surface. An alloy-junction wafer's thickness only had to budget for one base width, set by a single firing event working inward from both faces at once. This wafer's thickness has to budget for the base junction's full depth, set by Step 14's drive-in, and still leave a collector region thick enough afterward to carry current without excessive series resistance — a two-part arithmetic problem a single-diffusion or single-alloy process never had to solve.
## 1. Slice Thickness Has a Floor Set by a Depth Two Steps From Now Have Not Yet Fixed
Wafer thickness $t_{\text{wafer}}$ has to exceed the base-collector junction depth $x_{j,\text{base}}$ that Step 14's drive-in will eventually set, plus whatever minimum collector thickness $t_{\text{collector,min}}$ the device's electrical design requires beneath that junction — and this step has to commit to a thickness now, before the drive-in schedule that actually determines $x_{j,\text{base}}$ has even been run. A wafer cut too thin against a drive-in depth decided eight steps later leaves no collector at all once that drive-in actually happens; a wafer cut needlessly thick wastes germanium and adds series resistance this device's frequency response can ill afford.
## 2. Real Diagram: Thickness Decided Now, Against a Depth Fixed Much Later
## 3. Kerf Loss Competes With Margin, Not Just With Wafer Count
The number of wafers $N_{\text{wafers}}$ a given rod length $L_{\text{rod}}$ yields falls as either the wafer thickness $t_{\text{wafer}}$ or the saw's kerf loss $t_{\text{kerf}}$ grows, which is the same economic pressure every earlier slicing step in this project's history has faced. What is specific to this process is that the thickness term in that denominator is not a free optimization target — it is bounded below by the collector-margin constraint from Section 1, so this step cannot simply chase wafer count by thinning the slice; it can only improve kerf loss itself, or accept the yield the junction-depth floor actually allows.
## Slice the Germanium's Place in the Process Lineage
Slicing the germanium is step six of Bell Labs' twenty-six-step diffused-base manufacturing sequence — immediately after a usable crystal section was selected, and before any lapping, etching, or diffusion begins. It is the step that commits a wafer thickness against a base-junction depth no step before Step 14 will actually fix, which is why its margin has to be set generously enough to survive a schedule written well in advance of the furnace steps that make it real. Step seven, grinding or lapping the slices to their working thickness, refines this step's rough-cut dimension down toward the tolerance the later diffusion steps actually need.