emission microscopy

**Emission Microscopy (EMMI)** is a **failure analysis technique that detects photon emissions from defective areas of an IC** — where current flowing through a defect (gate oxide breakdown, latch-up, hot carriers) generates near-infrared light captured by a sensitive InGaAs camera. **What Is Emission Microscopy?** - **Principle**: Defective junctions or oxide breakdowns emit photons (hot carrier luminescence, avalanche emission). - **Detection**: InGaAs cameras sensitive to NIR wavelengths (900-1700 nm) can "see" through silicon from the backside. - **Modes**: Static (DC bias) or Dynamic (pulsed to isolate specific clock cycles). - **Equipment**: Hamamatsu PHEMOS, Quantifi/FEI. **Why It Matters** - **Localization**: Pinpoints the exact transistor or gate responsible for excessive leakage or latch-up. - **Backside Analysis**: Essential for flip-chip packages where the frontside is inaccessible. - **Non-Destructive**: Can be performed without decapsulation (through Si substrate). **Emission Microscopy** is **night vision for silicon** — seeing the glow of defects invisible to normal optics by capturing their faint photon emissions.