multi-beam mask writer

**Multi-Beam Mask Writer** is a **next-generation mask writing technology that uses a massively parallel array of individually controllable electron beamlets** — 250,000+ beamlets simultaneously write the mask pattern, achieving both high resolution and high throughput by parallelizing the writing process. **Multi-Beam Technology** - **Beamlet Array**: 256K+ individual beamlets arranged in an array — each beamlet is independently blanked (on/off). - **Rasterization**: The mask is written in a raster scan pattern — all beamlets write simultaneously across a stripe. - **Resolution**: Same resolution as single-beam e-beam — sub-10nm features on mask. - **IMS (Ion/Electron Multibeam Systems)**: MBMW-101 and MBMW-201 from IMS Nanofabrication (now part of KLA). **Why It Matters** - **Write Time**: 10× faster than VSB for shot-count-heavy advanced masks — enables ILT and curvilinear OPC. - **Curvilinear Masks**: Multi-beam can write curvilinear (non-Manhattan) mask patterns without shot count penalty. - **Cost-Effective**: For EUV masks and advanced DUV masks, multi-beam reduces write time from 20+ hours to <10 hours. **Multi-Beam Mask Writer** is **250,000 electron beams writing at once** — the massively parallel future of mask writing for advanced semiconductor nodes.