Point Contact 1947 Grind the Upper and Lower Faces Flat
# Grind the Upper and Lower Faces Flat: Two Faces, Two Very Different Flatness Standards
These two faces are not interchangeable surfaces grinded to the same standard for symmetry's own sake — the base face just needs to be flat enough for a broad, low-resistance metal contact, while the contact face has to be smooth at a scale far finer than anything the base face requires, because two point contacts will eventually sit on it only a few thousandths of an inch apart. A local surface irregularity that the base face would never notice — a grinding mark, a shallow pit, a few microns of roughness — can sit directly between or under the two closely-spaced points this device depends on, and because the entire transistor action comes from how those two points interact through the germanium beneath them, this step's standard for the contact face is set by that interaction distance, not by any general-purpose smoothness convention.
## 1. Surface Roughness Has to Stay Small Against the Contact Spacing Itself, Not Against Any Fixed Standard
The relevant comparison for this step's contact face isn't roughness against some universal flatness spec — it's roughness $R_a$ against $d_{\text{contacts}}$, the distance that will eventually separate the two point contacts, a spacing later steps in this sequence describe as only one to ten mils, roughly twenty-five to two hundred fifty microns. A grind quality that would be entirely adequate for a device where contacts sit millimeters apart becomes marginal or worse when the two active points sit this close together, because local height variations and residual mechanical damage at the roughness scale can sit directly in the small region where the two contacts' influence on each other actually has to happen cleanly.
## 2. Real Diagram: One Face Answers to a Coarse Standard, the Other to a Fine One
## 3. Grinding's Own Subsurface Damage Scales With the Abrasive, Not With the Device
Every grinding operation leaves a subsurface damage layer whose depth scales with the abrasive particle size used — coarser grit removes material faster but leaves deeper disturbed lattice behind it, finer grit leaves a shallower layer at the cost of slower material removal. This relationship has nothing to do with this device's own geometry, but its consequence does: because the contact face's roughness standard is set by the point-contact spacing rather than by any fixed tolerance, the grit size chosen for this face's final pass has to leave damage shallow enough, relative to that same spacing, that the later etch step can remove it completely before any point contact is ever placed.
## Grind the Upper and Lower Faces Flat's Place in the Process Lineage
Grinding the upper and lower faces flat is step three of the twenty-five-step sequence documenting the original 1947/48 Bell Labs point-contact transistor — immediately after the block was cut to size, and before any chemical etching, metallization, or surface treatment begins. It is the step that establishes two different flatness standards for the device's two faces, with the contact face's requirement set directly by the point-contact spacing later steps will actually use rather than by any general-purpose grinding convention, and it leaves behind a subsurface damage layer whose removal the very next step is responsible for. Step four, chemically etching the germanium, picks up exactly where this step's grinding leaves off.