Surface Barrier 1953 Electroplate Emitter Top Pit
# Electroplate the Emitter Into the Top Pit: Why the Second Contact Cannot Simply Repeat the First
This step forms the same kind of metal-semiconductor barrier step seventeen just formed on the opposite face, using the identical Faraday's-law deposition relationship — but repeating step seventeen's procedure exactly would leave this device without the one geometric asymmetry it actually needs to work as an amplifier. A transistor needs an emitter that injects carriers and a collector that gathers them, and gathering is inherently harder than injecting: carriers leaving the emitter spread out as they cross the base, so a collector sized to match the emitter exactly would miss some of that spread, while an emitter that matches the collector exactly wastes none of its own footprint on margin it does not need.
## 1. Collection Efficiency Depends on Relative, Not Absolute, Contact Area
Current gain in this device depends on collection efficiency $\alpha$, which falls short of unity by an amount set by how much emitter-injected current spreads laterally beyond the collector's own footprint before it can be gathered — a spreading loss $A_{\text{loss}}(W_B)$ that grows with base width $W_B$. Because step fifteen already fixed $W_B$ at a specific target, this step and step seventeen jointly control the one remaining lever available to minimize that loss: making the collector's contact area larger than the emitter's, so the collector's footprint overlaps more of the spreading carrier stream than a matched pair of equal-sized contacts ever could.
## 2. Real Diagram: Matched Contacts Waste Collection; Asymmetric Contacts Recover It
## 3. Smaller Contact, Same Electroplating Law, Different Target
This step deposits metal using the identical Faraday's-law relationship step seventeen established, holding thickness to the same target — but over a deliberately smaller area $A_{\text{emitter}}$, which for the same deposited volume means this step must apply correspondingly less total charge than step seventeen did, not merely repeat step seventeen's current and time settings verbatim. Getting this step's area wrong in either direction costs the device something specific: an emitter plated too large approaches the collector's own footprint and erodes the asymmetry Section 1 showed the device needs, while an emitter plated too small reduces the total injected current the whole device has to work with in the first place.
## Electroplate the Emitter Into the Top Pit's Place in the Process Lineage
Electroplating the emitter into the top pit is step eighteen of Philco's surface-barrier process, immediately after the collector has been plated into the bottom pit and before the device's two leads are attached. It completes this device's active structure — two metal-semiconductor contacts, formed exactly as step seventeen's analysis explained, now deliberately sized unequally so the collector can gather the carrier spread the base's own width guarantees. Step nineteen, attaching the emitter lead, and step twenty, attaching the collector lead, give each of these two freshly formed contacts the external connection the rest of the finished device will depend on.