timed etch
**Timed etch** is an etch control method where the process runs for a **predetermined, fixed duration** and then stops — regardless of the actual etch depth achieved. It is the simplest form of etch control and is used when the etch rate is well-characterized and stable.
**How Timed Etch Works**
- **Characterize**: Measure the etch rate (nm/min or Å/min) under specific process conditions through test wafers.
- **Calculate**: Determine the required etch time based on: $\text{Time} = \frac{\text{Target Depth}}{\text{Etch Rate}} \times (1 + \text{Overetch \%})$
- **Run**: Execute the etch for exactly the calculated time.
- **Verify**: Measure the actual etch result (depth, CD) to confirm it meets specifications.
**When Timed Etch Is Used**
- **Blanket Film Removal**: Etching uniform films without patterning where etch depth doesn't need to stop at a precise interface.
- **Resist Descum**: Short, timed O₂ plasma treatment.
- **Breakthrough Steps**: Removing thin, well-characterized barrier layers.
- **Well-Controlled Processes**: When the etch rate is stable and reproducible (run-to-run variation < 2%).
- **No Distinct Stop Layer**: When there's no material change to detect with endpoint methods.
**Advantages**
- **Simple**: No endpoint detection hardware or algorithms needed.
- **Reproducible**: If the etch rate is stable, timed etch gives consistent results.
- **Low Cost**: No additional metrology equipment integrated into the etch chamber.
**Disadvantages**
- **No Feedback**: If the etch rate drifts (due to chamber conditioning, consumable wear, or process drift), the timed etch doesn't compensate — it always runs the same duration.
- **Chamber-to-Chamber Variation**: Different etch chambers may have slightly different etch rates — the same time gives different results.
- **Film Thickness Variation**: If the incoming film is thicker on some wafers, a fixed etch time may under-etch them.
- **No Overetch Protection**: Cannot determine when the target material is consumed — may over-etch or under-etch without knowing.
**Safeguards**
- **Regular Rate Monitoring**: Run monitor wafers periodically to check etch rate stability.
- **APC (Advanced Process Control)**: Use measurements from previous wafers to adjust the etch time for the next wafer (feed-forward or feedback control).
- **Built-In Margin**: Include sufficient overetch time to account for expected variation (typically 10–30% overetch).
Timed etch is the **default approach** for non-critical etch steps and well-controlled processes — its simplicity makes it the workhorse of semiconductor etch operations when endpoint detection isn't necessary.