top-down sem

Top-down SEM imaging captures the wafer surface from directly above, providing plan-view measurements of CD, pattern shape, and defect inspection. **Perspective**: Electron beam perpendicular to wafer surface. Images show x-y dimensions but not depth/height. **CD measurement**: Measures linewidth and space width from edge-to-edge distance in top-down view. Standard approach for CD-SEM inline metrology. **Edge detection**: Secondary electron intensity peaks at feature edges due to topographic and material contrast. Algorithm extracts edge positions from intensity profiles. **Pattern verification**: Confirms lithography and etch patterns match design intent. Detects pattern defects (bridging, missing features, CD excursions). **LER/LWR measurement**: Line Edge Roughness and Line Width Roughness measured from top-down SEM images. Statistical analysis of edge position variation along line. **Tilted imaging**: Some CD-SEMs can tilt beam or stage slightly (e.g., 5-10 degrees) to gain limited 3D information about sidewall profile. **Resolution**: Modern CD-SEMs resolve features <10nm. Beam size ~3-5nm. **Limitations**: Cannot measure feature height, sidewall angle, or undercut directly. Cross-section or scatterometry needed for 3D profile. **Defect review**: Top-down SEM used for defect review after optical inspection identifies defect coordinates. **Sampling**: Top-down SEM typically measures subset of features for statistical process monitoring rather than 100% inspection.