Backside Power Delivery Network
Backside power delivery network (BSPDN) is the generic name for moving a chip's power wiring to the back side of the wafer, separate from the signal wiring on the front, and it describes a physical answer to a routing and voltage-drop problem every foundry pursuing sub-2nm-class logic has had to solve — not any single company's branded product. The three leading foundries each ship or plan their own named implementation of this idea: Intel calls its version PowerVia, TSMC calls its planned version Super Power Rail, and Samsung has its own backside power delivery network without a single widely used standalone brand name. How a foundry gets from conventional frontside power to a working backside power grid looks roughly like this:
A few things are worth knowing about why backside power delivery is an architecture, not a single company's product:
The problem BSPDN solves is that signal wiring and power wiring have been fighting for the same frontside metal layers, and that fight gets worse every node. In conventional chip construction, both the power grid and the signal routing share the same stack of copper layers built on the wafer's front, which means as that stack is asked to carry more signal traffic at tighter pitch, the power grid either gets squeezed into thinner, higher-resistance wires or has to compete for routing space — Intel reached a version of this wall that led to PowerVia debuting alongside RibbonFET on Intel 20A, while TSMC chose to ship its gate-all-around nanosheet transistor on N2 with conventional frontside power first, planning Super Power Rail for A16 instead.
Through-wafer vias are the specific mechanism that every company's backside power implementation has to get right, and getting it wrong either damages the transistor above or fails to make reliable contact. Connecting a backside power rail to a transistor's source and drain requires via structures that punch through the thinned wafer at a scale fine enough not to disturb delicate gate-all-around structures sitting just above — Intel's PowerVia uses nano-through-silicon-vias sized for its RibbonFET geometry, and TSMC's planned Super Power Rail will need an equivalent via structure sized for its own nanosheet transistor, which is why neither company's via design transfers directly to the other's device.
"BSPDN" and "backside power delivery" are the right terms when no company is named; "PowerVia" and "Super Power Rail" are the right terms when one is. This article covers the architecture and the interconnect physics that PowerVia, Super Power Rail, and Samsung's own backside power network all share. For what distinguishes each company's specific implementation — its qualification node, its paired transistor architecture, and its own generation-to-generation roadmap — see PowerVia and Super Power Rail directly, since each of those is a specific company's own platform built on the generic architecture described here.
Read backside power delivery the way this whole node-naming lineage keeps asking to be read: as a physical answer to a physical problem, arrived at independently by every foundry that needed one, where the generic term names the architecture and the company's own brand name — PowerVia, Super Power Rail, or Samsung's unbranded implementation — names that company's own platform, not a ruler the rest of the industry shares.