Bicmos Logic 1980s Pay the Process Complexity and Mask Cost Penalty
# BiCMOS Logic (Late 1980s): Step 16 — Pay the Process-Complexity and Mask-Cost Penalty
## 1. Returning to Step 5's Bill
Step 5 counted four to seven additional mask levels a merged BiCMOS flow requires over a pure CMOS flow. This step closes the loop by stating what that cost meant in practice: every wafer run through a BiCMOS process paid for those additional mask levels and their associated implant, diffusion, and anneal steps regardless of how many of the design's gates actually used a bipolar output stage, which meant a chip that used BiCMOS output stages only sparingly — exactly the usage pattern Steps 11 and 15 recommend — still paid close to the full per-wafer process premium.
## 2. Why This Kept BiCMOS From Becoming the Default Process Choice
A design that used little or no bipolar advantage gained nothing from that premium, which meant BiCMOS only made economic sense for designs with a genuine concentration of heavy-load, critical-path, or ECL-adjacent nodes large enough to justify the fixed per-wafer cost across the whole chip — SRAMs with sense-amp-dominated critical paths, ASICs with substantial bus-driving or off-chip interface requirements, or chips sitting directly adjacent to ECL subsystems. For the much larger population of designs that were mostly internal logic with modest fan-out, pure CMOS remained the economically correct choice even where a BiCMOS output stage would have been technically faster at a handful of nodes, because the process premium applied to the entire wafer, not just the nodes that used it.
## 3. Companion Diagram One: Quantitative View
## 4. Companion Diagram Two: Structural View