Source Degeneration

# Source Degeneration: Local Feedback Inside a Transistor Stage

Source degeneration places an impedance in a MOS transistor’s source path so that signal current generates an opposing source-voltage change. A resistor is the usual low-frequency example: as drain current rises, the source rises, reducing the increase in gate-to-source voltage. This local negative feedback lowers effective transconductance and can improve linearity and reduce sensitivity to transistor parameters.

## 1. Follow the feedback through the circuit

Source degeneration circuit and feedback mechanismNMOS common-source amplifier with drain resistor to VDD and source resistor to ground. Gate input, drain output and source voltage are labeled. A current increase raises source voltage and reduces gate-source drive. Body terminal and bias network omitted.A rising source voltage pushes backAn unbypassed source resistor creates local negative feedback.VDDRDv outv inNMOSv sRS1 · Current risesMore drop across RS.2 · Source risesv gs = v in − v s3 · Drive is reducedThe source motion opposesthe current increase.Effective transconductance: Gm ≈ gm / (1 + gm RS)

*Simplified common-source stage. The input includes an appropriate DC gate bias; the body connection and bias network are omitted. The source resistor is not bypassed at the signal frequency.*

At low frequency, neglecting body effect and transistor output conductance, i d = gm(v in − i d RS). Therefore the gate-to-drain-current transconductance is Gm = gm / (1 + gm RS). With a drain resistor and negligible external loading, the voltage gain is approximately Av = −gm RD / (1 + gm RS). The negative sign represents inversion at the drain output.

For gm = 10 mS and RS = 200 ohms, gm RS = 2 and Gm is about 3.33 mS. With RD = 1 kilohm the approximate voltage gain is −3.33 V/V. These are small-signal estimates at the stated operating point; parasitics, body effect, output resistance and loading change the result.

## 2. See the gain–linearity tradeoff

Equal-bias source degeneration transfer curvesCalculated ideal square-law MOS curves centered at identical drain bias current. Horizontal axis gate-voltage change over bias overdrive, from minus0.6 to plus0.6. Blue no resistor, green source resistance with gm RS equal2 at bias. Body effect and finite output resistance excluded.Less slope. Less curvature.Analytical square-law example at the same quiescent drain current.Normalized current change ΔID / I₀-101-0.600.6RS = 0gm RS = 2 at biasNormalized input change ΔVG / VOV₀At bias: slope falls from 2 to 2/3 in these normalized units.

*Calculated educational example, not PDK simulation or measurement. Both curves use the same ideal transistor and the same quiescent drain current I₀; the gate DC bias is adjusted to compensate for the resistor’s DC voltage drop. Enough drain headroom is assumed to maintain saturation throughout.*

The graph uses the ideal relation ID = β(VGS − VT)²/2. Define i = ID/I₀ and x = ΔVG/VOV₀, where VOV₀ is the transistor’s overdrive at the bias point. Without degeneration, i = (1 + x)². For the green curve, RS I₀/VOV₀ = 1, so x = √i − 1 + (i − 1) and gm RS = 2 at bias. These relations generate the plotted curves directly.

The green curve has lower slope and less curvature over the illustrated input range. The resistor absorbs part of the input-voltage change, so a given current swing requires more gate-voltage swing. For a practical linearity comparison, define the target output swing and distortion metric explicitly; a lower gain alone can reduce output distortion at fixed input amplitude.

## 3. Account for the costs

Design concernEffect of resistive degenerationWhat to check
GainEffective transconductance is reducedAvailable gain after loading
HeadroomDC current produces a source voltage dropSaturation and output swing across corners
NoiseThe resistor adds thermal noiseFull input-referred noise and noise figure
VariabilityGain can depend more on resistance than intrinsic gmResistor tolerance, mismatch and temperature coefficient
Frequency responseSource impedance changes with parasiticsSignal bandwidth and phase behavior

As gm RS becomes large, the simple effective-transconductance expression approaches 1/RS. This reduces dependence on intrinsic gm but increases the importance of resistor accuracy. Local feedback does not remove device mismatch, resistor mismatch or operating-point variation.

## 4. Distinguish resistor, bypass and inductor

A capacitor across RS can preserve DC bias feedback while reducing the source impedance at higher signal frequencies. The amount of signal degeneration then depends on frequency; a fully bypassed resistor provides little of the resistive signal feedback discussed above.

Inductive source degeneration, common in RF low-noise amplifiers, is frequency dependent and can help create a useful real input impedance together with the transistor’s transconductance and capacitances. Its matching, loss and noise behavior requires an RF model. The resistor’s low-frequency formula cannot be reused as a broadband LNA design rule.

For a BJT, the corresponding technique is emitter degeneration. The feedback idea is similar, while finite base current and input impedance require different quantitative expressions.

## 5. Verify the implemented stage

Confirm DC bias and saturation margin, then evaluate gain, input range, noise and distortion with the actual device models and load. Use the same bias and a clearly stated input- or output-swing comparison when judging linearity. Sweep process, voltage and temperature; include resistor corners and mismatch where precision matters. Harmonic balance simulation can evaluate settled RF distortion, while transient analysis reveals clipping and settling behavior.

## References

  • [Analog Devices: Single Transistor Amplifier Stages, section 9.5](https://wiki.analog.com/university/courses/electronics/text/chapter-9) — series feedback and emitter/source degeneration.
  • [JKU Institute for Integrated Circuits: Analog Integrated Circuit Design](https://iic-jku.github.io/analog-circuit-design/aicd.html) — transistor models, degeneration and mismatch tradeoffs.

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