Device Reliability & Aging Simulator

Model how a transistor wears out under bias and temperature — then run it: the simulation executes on the ChipFoundryServices distributed compute pool. A device does not fail all at once, it drifts, along three physical mechanisms. BTI (Bias-Temperature Instability) grows traps at the oxide interface so the threshold voltage creeps up as a slow power law in time ΔVth ∝ t0.16, accelerated by the oxide field (Vov/tox) and Arrhenius temperature — the dominant wear-out on modern logic. HCI (Hot-Carrier Injection) damages the interface every time the device switches, so its shift grows with the cycle count √(activity × frequency × time) and fiercely with drain voltage Vds4. TDDB (Time-Dependent Dielectric Breakdown) wears the gate oxide until a percolation path shorts it, with a mean-time-to-breakdown that falls as a steep power law in field MTTF ∝ Eox−40. The node accumulates the total Vth shift against the timing guardband, reports the wear-out life when the shift eats the budget, folds in oxide breakdown as a competing risk to get the MTTF, and returns the dominant mechanism and the frequency degradation — the same Vdd-vs-lifetime and reliability-margin trade-offs that decide how long a logic chip meets timing at the datacenter, mobile and automotive corners. Reduced-order educational model. See also the transistor I-V, power & thermal, thermal, interconnect RC/EM, 6T SRAM, die-yield, 3D-parallelism, HBM bandwidth, systolic array, CMP planarization and lithography simulators and the compute-pool status.

Datacenter AI · hot & busy Mobile SoC · low-V Automotive · 150°C corner
Threshold-voltage shift vs operating time (log₁₀ time). BTI (blue) creeps as t0.16, HCI (orange) as √cycles; their sum (green) is the accumulated guardband loss. The device fails when the total crosses the dashed Vth budget; the marker (●) is the shift reached at your target lifetime
Left: voltage acceleration — single-mechanism lifetimes and the combined MTTF vs supply voltage (log₁₀ years). Every mechanism steepens as Vdd rises; the dashed red line is your target life and the marker is the current Vdd. Right: the guardband budget — BTI and HCI contributions to the Vth shift at the target lifetime as a share of the failure budget (100 % = fail)
Developer API — same simulation over HTTP (load-balanced across the pool): 
curl -X POST https://www.chipfoundryservices.com/edge/reliability \
  -H "Content-Type: application/json" \
  -d '{"vdd_v":0.80,"vth0_v":0.30,"temperature_c":85,"eot_nm":1.0,
       "activity_factor":0.10,"frequency_ghz":2.0,"vth_budget_mv":60,
       "target_lifetime_yr":10}'
Returns JSON with outputs (dvth_bti_mv, dvth_hci_mv, dvth_total_mv, guardband_mv, freq_degradation_percent, tau_bti_yr, tau_hci_yr, tau_tddb_yr, wearout_life_yr, mttf_years, dominant_mechanism, meets_target, oxide_field_mv_cm, verdict), the full profile (64-point degradation Vth-shift-vs-time curve [t_yr, bti, hci, total] and 56-point life_vs_v voltage-acceleration sweep [vdd, tau_bti, tau_hci, tau_tddb, mttf], plus budget_mv, target_yr, vdd), the serving node, and compute_ms. Endpoint aliases /edge/aging, /edge/bti, /edge/hci, /edge/tddb, /edge/mttf, /edge/wearout.