brendel & bethge attack, ai safety
Decision-based attack starting from adversarial.
356 technical terms and definitions
Decision-based attack starting from adversarial.
Intermediate entity connecting question to answer.
Indirect references requiring inference.
Bridging faults model unintended connections between nodes causing shorts detected through functional or IDDQ testing.
Unintended connection between signals.
Different illumination modes.
Inspect wafer using reflected light to find defects.
Efficient element-wise operations.
Wire fracture.
Use Br chemistry for selective etching (HBr).
Browser inference via WebGPU or WASM. No server needed. Limited by device capability. Good for demos.
Brush scrubbers physically contact wafers removing particles through mechanical action.
Physical brushes + chemicals to remove stubborn particles.
Bayesian Structural Time Series models time series through state space framework with spike-and-slab priors.
Buffer management sizes and positions inventory protecting throughput from variability.
Protect bottleneck with inventory.
Temporary storage location for wafers inside tool.
HF + NH4F solution to etch oxide with controlled rate.
Identify potential bugs or vulnerabilities in code.
Automated bug detection and fixing. Explain errors, suggest fixes.
Identify location of bugs in code.
Summarize bug descriptions.
Voltage across depletion region.
On-chip structures monitoring aging.
Built-in repair uses on-chip circuitry to autonomously detect faults and activate redundant elements without external intervention.
Central storage and distribution of process gases (N2 O2 Ar H2 NH3 etc).
Bulk gases like nitrogen and argon are stored in large quantities on-site.
Oxygen precipitates and related defects.
Etch into substrate bulk.
Loose components.
Defect in material bulk.
Bull's eye patterns show concentric rings indicating radial process variations.
Combine Krum with trimmed mean.
Optimize camera poses and 3D points jointly.
Bundle recommendations suggest sets of complementary items rather than individual items.
Buried contacts directly connect polysilicon gates to diffusion regions without vias reducing resistance.
Heavily doped layer beneath devices.
Oxide layer in SOI structure.
Embed power rails below transistors.
Power delivery from backside or buried layers.
Test fixture for burn-in.
Minimize time while catching defects.
Optimize burn-in to catch early failures.
Temperature-controlled chamber.
Accelerate early failures before shipping.
Connect devices during burn-in.
Burn-in accelerates infant mortality through elevated temperature and voltage stress.
High-temperature operation to screen early failures.
Detailed screening processes for early failures.
Burn-in yield measures the percentage of devices surviving accelerated stress testing revealing infant mortality and latent defects.