← Back to Chip Foundry Services

Glossary

27,049 technical terms and definitions

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z All
Showing page 135 of 541 (27,049 entries)

Dprnn

dprnn, audio & speech

DPRNN is dual-path recurrent neural network tailored for efficient long-sequence speech separation - It applies stacked dual-path recurrent blocks to scale temporal modeling…

DPU

smartnic, smart nic, data processing unit, infrastructure offload, dpu infrastructure offload chip, nvidia bluefield 3 dpu, amd pensando, nvme over fabrics

A DPU, or data processing unit, also sold as a SmartNIC, is the third class of processor in a modern datacenter, sitting alongside the CPU and the GPU. Where the CPU runs…

Dqn

dqn, reinforcement learning

DQN (Deep Q-Network) is the foundational deep reinforcement learning algorithm that combines Q-learning with deep neural networks — using a CNN to estimate the action-value…

Draft Model

optimization

Draft Model is the fast proposal model used in speculative decoding to generate candidate tokens - It is a core method in modern semiconductor AI serving…

Draft Model Selection

inference

Draft model selection is the process of choosing the proposer model used in speculative decoding to maximize acceptance rate and net speedup under quality constraints - selection…

Dragonfly-Algorithm-Navigation Machine Learning

dragonfly algorithm navigation, dragonfly algorithm, algorithm navigation

Dragonfly Algorithm Navigation Introduction & Motivation Dragonfly Algorithm Navigation addresses a central problem in ml process control and path-quality-optimization prediction…

Drain Induced Barrier Lowering Prediction Machine Learning

drain-induced barrier lowering prediction, drain-induced barrier lowering, barrier lowering prediction, drain-induced barrier, barrier lowering, lowering prediction

Drain-Induced Barrier Lowering Prediction with Machine Learning Introduction & Motivation Drain-Induced Barrier Lowering Prediction with Machine Learning addresses a central…

Drain Induced Barrier Lowering Prediction Machine Learning

drain-induced barrier lowering prediction, drain-induced barrier lowering, barrier lowering prediction, drain-induced barrier, barrier lowering, lowering prediction

Drain-Induced Barrier Lowering Prediction with Machine Learning Introduction & Motivation Drain-Induced Barrier Lowering Prediction with Machine Learning addresses a central…

DRAM 1968 Memory Needs Different Structure Than Logic

ibm 1968 dennard sequential versus combinational device, 1t1c dram 1968 output depends on its own past state, dram memory 1968 first device this project built for persistence

Why Memory Needs an Entirely Different Structure Than Logic: The First Device This Project Has Built for Persistence, Not Speed 1. Why Every Earlier Series Built a Device That…

DRAM 1968 Store Bit as Capacitor Charge Not Transistor Latch

ibm dennard 1968 one transistor one capacitor memory cell, 1t1c dram charge storage replaces multi transistor latch, dram 1968 access transistor controls write and read

Store a Bit as Charge on a Capacitor, Not as a Latch of Transistors: Dennard's Radical Simplification 1. Replace a Circuit That Continuously Defends Its State with One Physical…

DRAM 1968 Build Access Transistor Self Aligned Gate Process

ibm dennard 1t1c word line bit line storage node transistor, 1t1c dram access mosfet selected row shared bit line, dram 1968 reuse silicon gate process for access transistor

Build the Access Transistor Using the Self-Aligned Gate Process Just Completed: A Direct Reuse of 1967's Silicon-Gate Process 1. The New Memory Architecture Does Not Require a New…

DRAM 1968 Build Storage Capacitor Beside Access Transistor

ibm dennard 1t1c mos capacitor stores bit charge, 1t1c dram capacitor area oxide thickness capacitance, dram 1968 mos capacitor becomes functional storage element

Build the Storage Capacitor Beside the Transistor: Turn the MOS Capacitor from a Test Structure into the Bit Itself 1. Reuse the Gate-Oxide-Silicon Stack for a Completely…

DRAM 1968 Confront Leakage Charge Does Not Stay Forever

ibm dennard 1t1c subthreshold junction dielectric leakage, 1t1c dram storage node charge decay leakage current, dram 1968 dynamic memory leakage requires refresh

Confront Leakage: Why the Charge Does Not Stay Forever 1. The Same Off-State Current That Was Negligible for CMOS Logic Is Now the Central Failure Mechanism The 1963 CMOS series…

DRAM 1968 Measure Retention Time Set Refresh Interval

ibm dennard 1t1c write wait read retention test, 1t1c dram weakest cell retention distribution guard band, dram 1968 refresh interval protects stored charge margin

Measure the Retention Time and Set the Refresh Interval 1. Retention Time Is Measured from a Completed Write to the Last Reliable Read Step 5 established that leakage continuously…

DRAM 1968 Confront Destructive Readout Restore Cell Charge

ibm dennard 1t1c bit line charge sharing read, 1t1c dram sense amplify restore after every read, dram 1968 reading capacitor requires write back

Confront Destructive Readout: Reading the Cell Disturbs the Charge Being Read 1. The Bit Cannot Be Observed Without Connecting It to a Much Larger Electrical Node A 1T1C cell has…

DRAM 1968 Measure Area Advantage Versus Six Transistor Latch

ibm dennard 1t1c cell area compared with 6t memory, 1t1c dram repeated cell tile and shared periphery density, dram 1968 smaller cell enables higher bit density

Measure the Area Advantage Against a Six-Transistor Latch 1. Compare Repeated Cell Footprints, Not Transistor Counts in Isolation The density advantage of Dennard's cell comes…

DRAM 1968 Qualify Density Against Refresh Complexity

ibm dennard 1t1c cell density shared array overhead, 1t1c dram refresh occupancy sensing restore tradeoff, dram 1968 qualify complete memory macro architecture

Qualify the Trade: Density Against Refresh Complexity 1. The Cell Becomes Simpler by Moving Work into the Array The 1T1C architecture does not eliminate the functions a memory…

DRAM 1968 Classify Release Large Scale Memory Architecture

ibm dennard 1t1c dynamic random access memory classification, 1t1c dram cell array macro release qualification, dram 1968 compact cell shared circuitry enables large memory

Classify and Release: The Architecture That Makes Large-Scale Memory Possible 1. Classify the Finished Device by What It Stores and What It Requires The completed one-transistor…

DRAM Buried Word Line

buried word line DRAM, BWL DRAM, recessed channel array transistor, RCAT DRAM, saddle-fin DRAM transistor, GIDL DRAM word line, word line GIDL, sub word line driver, hierarchical word line, DRAM Vpp word line boost

DRAM Buried Word Line: Saddle-Fin Gate Architecture, the GIDL Trade-Off, and Hierarchical Row Activation A buried word line (BWL) is a DRAM access-transistor gate that no longer…

DRAM Capacitor Aspect Ratio Uniformity Prediction Machine Learning

dram capacitor aspect ratio uniformity prediction, dram capacitor aspect, capacitor aspect ratio, aspect ratio uniformity, ratio uniformity prediction, aspect ratio

DRAM Capacitor Aspect Ratio Uniformity Prediction with Machine Learning Introduction & Motivation DRAM Capacitor Aspect Ratio Uniformity Prediction with Machine Learning addresses…

DRAM Capacitor Dielectric Leakage Current Prediction Machine Learning

dram capacitor dielectric leakage current prediction, dram capacitor dielectric, capacitor dielectric leakage, dielectric leakage current, dram capacitor

DRAM Capacitor Dielectric Leakage Current Prediction with Machine Learning Introduction & Motivation DRAM Capacitor Dielectric Leakage Current Prediction with Machine Learning…

DRAM Capacitor Leakage Drift Prediction Machine Learning

dram capacitor leakage drift prediction, dram capacitor leakage, capacitor leakage drift, leakage drift prediction, dram capacitor, capacitor leakage, leakage drift, drift prediction

DRAM Capacitor Leakage Drift Prediction with Machine Learning Introduction & Motivation DRAM Capacitor Leakage Drift Prediction with Machine Learning addresses a central problem…

DRAM Ecc

ECC DRAM, SECDED, Hamming code DRAM, Chipkill, Advanced ECC, ECC DIMM, single error correction double error detection

DRAM ECC: Hamming SECDED Architecture, Reliability Theory, and the Chipkill Application ECC is the layer that stops pretending the physics underneath it is perfect. Every…

DRAM Fabrication Process

dram cell structure, dram capacitor, dram refresh, 1t1c dram cell

DRAM (dynamic random-access memory) stores each bit as charge on a tiny capacitor, gated by a single access transistor — the '1T1C' cell. It is 'dynamic' because that charge leaks…

DRAM Refresh Bitmap Repair Prediction Machine Learning

dram refresh bitmap repair prediction, dram refresh bitmap, refresh bitmap repair, bitmap repair prediction, dram refresh, refresh bitmap, bitmap repair, repair prediction

DRAM Refresh Bitmap Repair Prediction with Machine Learning Introduction & Motivation DRAM Refresh Bitmap Repair Prediction with Machine Learning addresses a central problem…

DRAM Refresh Command Overhead Prediction Machine Learning

dram refresh command overhead prediction, dram refresh command, refresh command overhead, command overhead prediction, dram refresh, refresh command, command overhead

DRAM Refresh Command Overhead Prediction with Machine Learning Introduction & Motivation DRAM Refresh Command Overhead Prediction with Machine Learning addresses a central problem…

DRAM Refresh Controller

refresh controller DRAM, tREFI DRAM, tRFC refresh cycle time, per-bank refresh, REFpb, all-bank refresh, refresh overhead DRAM, DRAM temperature compensated refresh

DRAM Refresh Controller: Row-Scheduling Architecture, the Refresh-Tax Theory, and Per-Bank Refresh Application The refresh controller is the part of DRAM that never gets to rest.…

DRAM Refresh Cycle Optimization Prediction Machine Learning

dram refresh cycle optimization prediction, dram refresh cycle, refresh cycle optimization, cycle optimization prediction, dram refresh, refresh cycle, cycle optimization

DRAM Refresh Cycle Optimization Prediction with Machine Learning Introduction & Motivation DRAM Refresh Cycle Optimization Prediction with Machine Learning addresses a central…

DRAM

dram, dynamic random-access memory, 1T1C DRAM, DRAM cell architecture, DRAM refresh, DRAM storage capacitor, DRAM memory matrix, DRAM sensing, dram refresh fail bit count, fail bit count prediction

DRAM: Dynamic Random-Access Memory — Architecture, Retention Physics, and 1T1C Scaling Dynamic Random-Access Memory (DRAM) is the fundamental working memory of computing: it…

DRAM Refresh Interval Drift Prediction Machine Learning

dram refresh interval drift prediction, dram refresh interval, refresh interval drift, interval drift prediction, dram refresh, refresh interval, interval drift, drift prediction

DRAM Refresh Interval Drift Prediction with Machine Learning Introduction & Motivation DRAM Refresh Interval Drift Prediction with Machine Learning addresses a central problem…

DRAM-Refresh-Overhead Machine Learning

dram refresh overhead and capacity trade-offs, dram refresh overhead, refresh overhead capacity, overhead capacity trade-offs, dram refresh, refresh overhead, overhead capacity

DRAM Refresh Overhead and Capacity Trade-Offs Introduction & Motivation DRAM Refresh Overhead and Capacity Trade-Offs addresses a central problem in memory process control…

DRAM Refresh Rate Optimization Machine Learning

dram refresh rate optimization, dram refresh rate, refresh rate optimization, dram refresh, refresh rate, rate optimization

DRAM Refresh Rate Optimization with Machine Learning Introduction & Motivation DRAM Refresh Rate Optimization with Machine Learning addresses a central problem in DRAM refresh…

DRAM Refresh Rate Optimization Machine Learning

dram memory optimizing refresh rates in dram to balance power and data retention, dram memory optimizing, memory optimizing refresh, optimizing refresh rates, refresh rates dram, dram memory

DRAM Memory: Optimizing refresh rates in DRAM to balance power and data retention Introduction & Motivation DRAM Memory: Optimizing refresh rates in DRAM to balance power and data…

DRAM Refresh Rate Optimization Machine Learning

optimizing refresh rates in dram to balance power and data retention, optimizing refresh rates, refresh rates dram, rates dram to, dram to balance, to balance power, balance power data

Optimizing refresh rates in DRAM to balance power and data retention Introduction & Motivation Optimizing refresh rates in DRAM to balance power and data retention addresses…

DRAM Refresh Row Hammer Prediction Machine Learning

dram refresh row hammer prediction, dram refresh row, refresh row hammer, row hammer prediction, dram refresh, refresh row, row hammer, hammer prediction

DRAM Refresh Row Hammer Prediction with Machine Learning Introduction & Motivation DRAM Refresh Row Hammer Prediction with Machine Learning addresses a central problem in DRAM…

DRAM-Roadmap Machine Learning

next-generation dram technology, next-generation dram, dram technology

Next-Generation DRAM Technology Introduction & Motivation Next-Generation DRAM Technology addresses a central problem in memory process control and capacity-per-die prediction…

DRAM Row Hammer

row hammer DRAM, rowhammer, aggressor row victim row, target row refresh, TRR DRAM, activation threshold DRAM, PRAC DDR5, refresh management RFM

DRAM Row Hammer: Disturbance Architecture, the Activation-Threshold Theory, and Target Row Refresh Application Row hammer is what happens when the same electrical margins this…

DRAM Scaling Technology

high bandwidth memory HBM, DRAM cell capacitor, DDR5 LPDDR5 memory, memory wall bandwidth

High-bandwidth memory (HBM) is DRAM stacked vertically and connected to its host through an interface thousands of bits wide, running beside the processor on an interposer rather…

DRAM Sense Amplifier

sense amplifier DRAM, cross-coupled latch DRAM, folded bitline DRAM, bit line isolation transistor, DRAM bit line equalization, sense amp offset DRAM, Pelgrom law DRAM, regenerative sense amplifier

DRAM Sense Amplifier: Cross-Coupled Latch Architecture, Regenerative Feedback Theory, and the Folded-Bitline Application The sense amplifier is where a DRAM read actually becomes…

DRAM Sti

DRAM shallow trench isolation, shallow trench isolation DRAM, DRAM cell isolation, STI corner leakage, buried word line isolation, saddle fin transistor, DRAM active area isolation, STI gap fill DRAM, cell-to-cell leakage DRAM, STI aspect ratio scaling

DRAM STI: Shallow Trench Isolation Architecture, Corner-Leakage Theory, and the Cell-to-Cell Isolation Moat Shallow trench isolation (STI) is the etched, oxide-filled moat that…

DRAM Storage Capacitor Aspect Ratio Prediction with Machine Learning

dram storage capacitor aspect ratio prediction machine learning, dram storage, capacitor aspect ratio, dram sem, dram storage capacitor aspect ratio prediction

DRAM Storage Capacitor Aspect Ratio Prediction with Machine Learning Introduction & Motivation DRAM Storage Capacitor Aspect Ratio Prediction with Machine Learning addresses…

DRAM-Tech Machine Learning

dram technology roadmap, dram technology, technology roadmap

DRAM Technology Roadmap Introduction & Motivation DRAM Technology Roadmap addresses a central problem in memory process control and capacity prediction: how to Predict capacity…

DRAM Technology Scaling

dram cell capacitor, dram high k capacitor, 4f2 dram cell, dram refresh reliability

High-bandwidth memory (HBM) is DRAM stacked vertically and connected to its host through an interface thousands of bits wide, running beside the processor on an interposer rather…

DRAM Twin-Cell Reference

twin cell DRAM, differential sense amplifier DRAM, dummy cell reference DRAM, common-mode rejection DRAM, radiation hardened DRAM, twin cell sensing

DRAM Twin-Cell Reference: Differential Sensing Architecture, Common-Mode Cancellation Theory, and the Reliability-Density Trade-Off A twin-cell reference replaces the sense…

DRAM Voltage Timing Drift Prediction Machine Learning

dram voltage and timing drift prediction, dram voltage timing, voltage timing drift, timing drift prediction, dram voltage, voltage timing, timing drift, drift prediction

DRAM Voltage and Timing Drift Prediction with Machine Learning Introduction & Motivation DRAM Voltage and Timing Drift Prediction with Machine Learning addresses a central problem…

DRAM Word Line Resistance Variation Prediction Machine Learning

dram word line resistance variation prediction, dram word line, word line resistance, line resistance variation, resistance variation prediction, dram word, word line

DRAM Word Line Resistance Variation Prediction with Machine Learning Introduction & Motivation DRAM Word Line Resistance Variation Prediction with Machine Learning addresses…

64k DRAM 1979 Address Pin Count Outgrows the Package

dram address multiplexing row column shared pins, log2 n address pins versus package cost pin count, ras cas row address strobe column address strobe sequencing

Why Doubling the Array Four Times Over Threatens to Double the Pins the Package Can't Spare 1. State the Pin-Count Arithmetic a Growing Array Forces Every series this project has…

DRAM 64k 1979 Ras Cas Timing Sequencing Requirement

row address strobe column address strobe active low latch, t_rcd ras to cas delay sense amplifier settling time, ras cas timing cost traded against pin count savings

Tell the Chip Which Half of the Address It Is Looking At 1. Add the Signal the Multiplexing Scheme Was Missing Step 1 showed that the same 8 pins can carry a row address and then…