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Glossary

436 technical terms and definitions

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Showing page 6 of 9 (436 entries)

Sensitivity

metrology

Sensitivity in metrology is the change in instrument response per unit change in the measured quantity — mathematically the slope of the calibration curve ( ), sensitivity…

Setup Wafers

alignment verification, recipe verification, dummy wafer fill, send ahead wafer, tool readiness check, lithography calibration, batch uniformity, automated setup verification, non product wafer

Setup wafers are non-product wafers run specifically to verify that a tool is correctly aligned, properly configured with the right recipe parameters, and genuinely ready…

Shallow Trench Isolation Process

sti cmp planarization, trench fill oxide deposition, active area definition, isolation oxide densification

Shallow trench isolation (STI), high-aspect-ratio dielectric gap fill, chemical mechanical polishing (CMP), and channel mechanical stress engineering constitute the primary…

Shallow Trench Isolation Sti

sti process flow, sti fill cvd, sti cmp planarization, isolation trench semiconductor

Shallow trench isolation (STI), high-aspect-ratio dielectric gap fill, chemical mechanical polishing (CMP), and channel mechanical stress engineering constitute the primary…

Shallow Trench Isolation Sti

device isolation cmos, sti process fill, lcos isolation, isolation oxide semiconductor

Shallow trench isolation (STI), high-aspect-ratio dielectric gap fill, chemical mechanical polishing (CMP), and channel mechanical stress engineering constitute the primary…

Sheet Resistance Mapping

sheet resistance map, sheet resistance uniformity mapping, wafer sheet resistance map, resistivity mapping four point probe

Four-point probe metrology measures sheet resistance by forcing current through two contacts and sensing voltage with two separate contacts, so the voltage channel carries almost…

Short Flow Test Structures

metrology

Spectroscopic ellipsometry and inline optical wafer metrology constitute the non-destructive physical measurement and defect detection disciplines that govern yield control across…

SiC

semiconductor etch, sic dry etching, sic plasma etching, sf6 o2, sic trench etch, etch mask sic

Read SiC dry etching through a plasma-physics and etch-rate/selectivity lens rather than a wet-chemistry lens. Silicon carbide's lattice is locked together by Si–C covalent bonds…

SiC Power Device Fabrication

silicon carbide process, sic mosfet, sic wafer, wide bandgap fabrication

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

SiC Power Module Packaging

sic diode switching, sic inverter efficiency, sic device aging, sic gate driver design

Silicon Carbide Power Module is a wide-bandgap semiconductor technology enabling superior high-temperature, high-frequency power switching through improved blocking voltage…

SiC Semiconductor

silicon carbide, wide bandgap, sic power

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

Sidewall Image Transfer

sit, self aligned spacer patterning, spacer lithography, sit patterning, pitch halving

Sidewall Image Transfer (SIT) is the self-aligned patterning technique that uses the sidewall spacers deposited on a lithographically defined mandrel as the actual etch mask…

Sige Hbt Bipolar Process

bipolar base collector emitter, heterojunction bipolar transistor fabrication, bicmos process integration, hbt speed cutoff frequency

A silicon-germanium heterojunction bipolar transistor is a vertical NPN device whose epitaxial base changes band structure and doping. Fabrication must grow a low-defect SiGe:C…

Signal-to-Noise Ratio

snr, metrology

SNR (Signal-to-Noise Ratio) is the ratio of the analytical signal to the noise level — where is the signal intensity and is the noise amplitude, quantifying the quality…

Signature Analysis

metrology

Spectroscopic ellipsometry and inline optical wafer metrology constitute the non-destructive physical measurement and defect detection disciplines that govern yield control across…

Silicon

material science, silicon wafer, diamond cubic lattice, czochralski growth, native oxide, silicon dioxide, intrinsic silicon, electronic-grade silicon, band gap

Silicon is the element nearly every chip on Earth is built from — not because it's the best semiconductor on paper, but because it combines a workable band gap, an extraordinarily…

Silicon Interposer

through silicon via TSV, micro bump pitch, copper to copper bonding, impedance controlled routing, chiplet signal integrity, 2.5D thermal management, thermal via hot spot, chiplet rework, passive substrate routing

A silicon interposer is a passive silicon substrate carrying embedded electrical interconnects that routes signals and power between multiple chiplets mounted on top of it…

Silicon

photonics, chip, co-design, integration

Silicon Photonics Chip Co-Design is an integrated design methodology combining photonic optical components with electronic control circuits on a single silicon substrate — Silicon…

Silicon Carbide

sic power, sic mosfet, wide bandgap semiconductor

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

Silicon Carbide SiC MOSFET

sic power device, sic substrate wafer, electric vehicle sic, sic inverter

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

Silicon Carbide SiC Wafer

sic substrate manufacturing, sic crystal growth, sic wafer defect, sic epitaxy

Wide bandgap (WBG) power semiconductors, gallium nitride (GaN) High-Electron-Mobility Transistors (HEMT), and silicon carbide (4H-SiC) power MOSFETs constitute the foundational…

Silicon Carbide Wafer

SiC boule growth, micropipe defect density, basal plane dislocation, wide bandgap power semiconductor, physical vapor transport growth, grind polish SiC hardness, power device reliability, automotive traction inverter, SiC substrate cost

Silicon carbide wafer manufacturing is the crystal growth and wafering process flow that produces wide-bandgap silicon carbide substrates for power semiconductor devices, and it's…

Silicon Grown Junction 1954 Inspect the Bars

griffith fracture criterion 111 cleavage microcrack, back to back diode screening curve tracer bvcbo bvebo, stereomicroscope edge chipping quality gate ti 1954

Inspect the Bars: Dual Mechanical Crack Screening and Two-Junction Gate Slicing the ingot core into individual matchsticks in Step 23 yielded dozens of isolated silicon bars, but…

Silicon Grown Junction 1954 Melt the Charge

silicon latent heat of fusion 1787 kj kg density anomaly, silicon semiconductor to metallic melt transition rf coupling, floating solid silicon chunks optical pyrometer plateau 1414

Melt the Charge: Supplying 1414°C Latent Heat Through an RF Induction Susceptor Reaching silicon's 1414°C melting point on an optical pyrometer looks like a single milestone, but…

Silicon Interposer

advanced packaging, cowos, 2.5d packaging, tsv interposer

Interposers are the substrates that carry 2.5D integration: a die-to-die wiring layer dense enough to route thousands of connections between chiplets that sit side by side.…

Silicon Interposer Packaging

organic substrate bga, substrate trace routing, package substrate laminate, high density substrate

Advanced Packaging Interposer Substrate is a engineering infrastructure connecting semiconductor dies to external connections through elaborate multi-layer routing networks…

Silicon Nitride Deposition

SiN film, PECVD nitride, LPCVD nitride, nitride applications

Silicon Nitride (SiN/Si3N4) Deposition encompasses the CVD processes — primarily LPCVD and PECVD — used to deposit silicon nitride films that serve as etch stops, hard masks…

Silicon on Insulator Soi

fdsoi fully depleted, soi wafer fabrication, body biasing fdsoi, soi vs bulk cmos

Silicon-on-Insulator (SOI) substrate engineering, Fully Depleted SOI (FD-SOI) planar architectures, and dynamic back-gate body biasing constitute the engineered substrate…

Silicon-on-Insulator (Soi) Wafer

substrate

Silicon-on-Insulator (SOI) substrate engineering, Fully Depleted SOI (FD-SOI) planar architectures, and dynamic back-gate body biasing constitute the engineered substrate…

Silicon Orientation

crystal orientation, miller indices, 100, 110, 111, material science, wafer, crystallography

Silicon crystal orientations refer to the specific crystallographic planes used as the surface of silicon wafers — identified by Miller indices like (100), (110), and (111), each…